buried layer
英 [ˈberid ˈleɪə(r)]
美 [ˈberid ler]
网络 埋层; 埋入层; 埋藏层; 掩埋层; 内埋层
双语例句
- The ritual was buried beneath layer after layer of civilization.
这个仪式被埋没在多层文明之下。 - The soft soil subgrade treatment should be adopted different measures according to the physical and chemistry characteristics of soft soil, buried layer depth, material condition and road.
软土路基处理应根据软土、淤泥的物理力学性质、埋层深度、材料条件、公路等因素分别采取处理措施。 - Buried Layer-A path of low resistance for a current moving in a device. Many of these dopants are antimony and arsenic.
埋层-为了电路电流流动而形成的低电阻路径，搀杂剂是锑和砷。 - Structure study of SiC buried layer by high temperature C~+ implantation
高温碳离子注入形成碳化硅埋层的结构研究 - Study on preparation and properties of SiC buried layer
SiC埋层的制备与性质研究 - Using the derived amplitude and phase expressions, the experimental data of the three-layer sample are fitted. The thickness of the buried layer in the sample is calculated.
用推导的振幅和位相表达式拟合三层样品的实验数据，并计算出中间层的厚度。 - The result shows that the purpose of improving this current gain can be realized if the N~+ buried layer is abandoned and a thin epitaxial layer is chosen to increase the current vertically injected into the substrate and to reduce the recombination current in the base.
结果表明，如不采用N~+埋层，但选用适当薄的外延层，使纵向注入衬底的电流增加和使基区复合电流减小，可以实现提高多集电极横向晶体管电流增益的目的。 - Theory of photothermal radiometry for multilayer samples and noncontact measurement of buried layer thickness
多层样品的PTR理论及其埋层厚度的非接触测量 - Analytical Model of Silicon Top Layer and Buried Oxide Layer Thicknesses for SIMOX SOI Structure
为SIMOXSOI结构的硅膜和二氧化硅埋层厚度模型 - A novel LDMOS with buried layer named B-LDMOS is proposed. The structure of B-LDMOS only different from normal LDMOS is that the B-LDMOS has a buried layer under the drain.
提出一种具有埋层的LDMOS，其结构为在普通的LDMOS的漏极下方引入适当剂量的埋层结构，就可以明显优化LDMOS的纵向电场分布，提高LDMOS的击穿电压。 - The thickness of epitaxial Si layer and buried oxide layer is uniform, and the crystal quality of epitaxial Si layer is good. The defects in the epitaxial Si layer resulted from the defects in the SOI substrate.
在标准剂量的SOI衬底上生长了厚度约为8μm的Si层，研究发现外延层和氧化埋层厚度均匀性良好，外延层单晶性能良好，SOI衬底中缺陷导致了外延层中的缺陷。 - Experiment results show that the buried Si_3N_4 layer is amorphous and the new SOI material has good structural and electrical properties.
实验结果显示，Si3N4层为非晶状态，新结构的SOSN具有良好的结构和电学性能。 - A computer program has been set up to simulate the formation process and final structure of AlN layer on the basis of the formation mechanism of AlN buried layer by ion implantation.
基于离子注入形成A1N埋层的机理，利用计算机程序动态模拟A1N层的形成过程及终态结构。 - A p buried layer formed by implanting Be ￣+ or Mg ￣+ in n-GaAs chan-nel layer with Si ￣+ implantation is presented.
介绍了在Si￣＋注入的n－GaAs沟道层下面用Be￣＋或Mg￣＋注入以形成p埋层。 - This paper discussed the propagation characterstics of surface acoustic wave, the screening of buried conductive layer and the reflection of metal matrix in gallium arsenide acoustic charge transport ( ACT) devices.
本文讨论了埋沟砷化镓声电输运器件中声表面波传播特性，金属栅阵列的散射特性和导电理层对表面波的屏蔽特性。 - For p-type ( 100) silicon substrate, the orientation deviation is the main factor influencing pattern distortion in epitaxial buried layer.
本文指出，在影响P型（100）硅处延埋层图形畸变的诸因素中，衬底晶向偏离度是决定性的。 - The Effective Recombination Velocity at the NN~+ Interface in Buried Layer and n Epilayer-n~+ Substrate Structure
埋层和外延NN~+结构高低结界面的有效复合速度 - The doping profile of buried layer and the shape of the transition re-gion of n epilayer-n+ substrate structure are suggested to be Gaussian.
本文假设埋层或外延NN~+结构过渡区的杂质浓度分布为高斯分布。 - Modelling of the effects of properties of a buried weak layer on seismic waves
软弱夹层特性对地震波强度影响的模拟研究 - The shallow buried layer of tunnel entrance section lies in the overburden or drift bed layer and highly weathered broken rock mass.
公路隧道的洞口浅埋段，多处于覆盖层、坡积层或风化严重的软弱破碎岩体中。 - A Highly Heat-Dissipating SOI High Voltage Power Device with a Variable k Dielectric Buried Layer
高散热变k介质埋层SOI高压功率器件 - A novel buried n layer partial SOI RF power LDMOS is proposed.
提出了具有n埋层PSOI（部分SOI）结构的射频功率LDMOS器件。 - The SiC buried layer was studied by X-ray photo-emission spectroscope ( XPS), Fourier transform infrared spectroscope ( FTIR) and Auger electronic spectroscope ( AES).
通过X射线光电子能谱（XPS），俄歇电子能谱（AES）及付立叶变换红外吸收光谱（FTIR），对所形成的碳化硅埋层进行了测试与分析。 - Effect of Orientation Deviation on Pattern Distortion in Epitaxial Buried Layer on P 100 Si Substrate
P＜100＞Si衬底晶向偏离度对外延埋层图形畸变的影响 - Technical Research of p Buried Layer
P埋层技术研究 - This buried layer can increase the breakdown voltage of the LDMOS almost without influence on the specific on-resistance, switching characteristics, forward drop voltage and so on.
由于优化在器件的漂移区之外，所以，击穿电压的升高而比导通电阻、开关特性、正向压降等几乎没有变化。 - The GaAs/ Ge solar cell with buried layer Bragg reflector was fabricated.
制作出具有埋层Bragg结构的GaAs/Ge太阳电池。 - A novel SOI high voltage device structure with a variable low k dielectric layer ( VLkD) is proposed. The buried layer is made up of dielectrics with variable k.
提出了一种可变低k（相对介电常数）介质层（variablelowkdielectriclayer，VLkD）SOI高压器件新结构，该结构的埋层由可变k的不同介质组成。 - Scientists have proposed a series of solutions, among which ion implantation technology was considered as potential since it was beyond the limit of thermodynamic equilibrium, and could precisely control implantation dose and buried layer thickness.
在众多解决方案中，离子注入技术由于不受热力学平衡的限制、且能比较精确地控制注入剂量和埋层厚度，是未来制备高质量、大尺寸SiC材料的重要方法。